Infineon ISZ080N10NM6 OptiMOS 6 100V Power MOSFET for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power switching components. Infineon Technologies addresses these challenges head-on with the ISZ080N10NM6, a 100V N-channel MOSFET from the advanced OptiMOS™ 6 technology platform. This device is engineered to set a new benchmark for performance in a wide array of power conversion applications, including server and telecom SMPS, industrial motor drives, and solar inverters.

A cornerstone of this MOSFET's superiority is its exceptionally low figure-of-merit (R DS(on) x Q G). With a maximum on-state resistance of just 0.8 mΩ and optimized gate charge, the device achieves an outstanding balance between conduction and switching losses. This translates directly into higher overall system efficiency, allowing designers to meet stringent energy standards like 80 PLUS Titanium for server PSUs. The reduced power loss also means less heat is generated, which can simplify thermal management and potentially reduce the size and cost of heatsinks and enclosures.

Beyond raw efficiency, the OptiMOS™ 6 technology offers enhanced robustness and reliability. The ISZ080N10NM6 features a high body diode robustness (commutating dV/dt) and is qualified for exceptional avalanche ruggedness. These characteristics make it exceptionally durable in harsh operating environments and under unpredictable stress conditions, such as inductive load switching, thereby improving system longevity and reducing field failure rates.

The device is offered in the space-saving SuperSO8 package (PG-TDSON-8), which provides a very low parasitic inductance and excellent thermal performance. This compact footprint is crucial for designers aiming to increase the power density of their systems without compromising thermal behavior or electrical performance. The package is also optimized for automated assembly processes, supporting high-volume manufacturing.

In summary, the Infineon ISZ080N10NM6 is a pivotal component for engineers designing the next generation of high-efficiency power electronics. Its blend of ultra-low losses, high robustness, and excellent switching characteristics makes it an ideal choice for demanding applications where every percentage point of efficiency and every cubic millimeter of space count.

ICGOODFIND: The Infineon ISZ080N10NM6 OptiMOS™ 6 100V MOSFET is a top-tier solution that delivers superior efficiency, high power density, and unmatched robustness for advanced power conversion systems.

Keywords: Power Efficiency, OptiMOS™ 6, Low RDS(on), High Power Density, SuperSO8 Package