Infineon BSD235CH6327: High-Performance N-Channel 60 V MOSFET in SuperSO8 Package

Power management efficiency is a cornerstone of modern electronic design, driving the demand for components that offer superior performance in increasingly compact form factors. The Infineon BSD235CH6327 stands out as a prime example, an N-Channel 60 V MOSFET engineered to meet these exacting demands. Housed in the innovative SuperSO8 (SSO8) package, this device is tailored for applications requiring high power density and exceptional switching efficiency.

A key highlight of the BSD235CH6327 is its exceptionally low on-state resistance (RDS(on)) of just 2.5 mΩ (max. at VGS = 10 V). This minimal resistance is critical for reducing conduction losses, which directly translates to higher system efficiency and lower heat generation. This allows designers to either improve the performance of their systems or reduce the size and cost of associated heat sinks. The 60 V drain-source voltage (VDS) rating makes it a robust and reliable choice for a wide range of industrial and automotive applications, including DC-DC converters, motor control, and load switching systems.

The choice of package is equally significant. The SuperSO8 package provides a footprint-compatible alternative to the standard SO-8 but with vastly superior thermal and electrical characteristics. It features an exposed pad that enables excellent heat dissipation away from the silicon die, allowing the MOSFET to handle high continuous drain currents (ID) up to 210 A. This superior thermal performance is paramount for maintaining device reliability under strenuous operating conditions.

Furthermore, the MOSFET is characterized by low gate charge (Qg) and fast switching speeds. These parameters are essential for high-frequency switching regulators, as they minimize switching losses and enable designers to push power supply frequencies higher, thereby reducing the size of passive components like inductors and capacitors.

In summary, the Infineon BSD235CH6327 represents a fusion of high-voltage capability, minimal losses, and outstanding thermal performance in a miniature package, making it an ideal solution for power-conscious designs.

ICGOOODFIND: The Infineon BSD235CH6327 is a top-tier component for engineers optimizing for power density and efficiency. Its winning combination of ultra-low RDS(on), a thermally enhanced SuperSO8 package, and a 60 V rating makes it a superior choice for demanding power conversion and motor drive applications.

Keywords: Power MOSFET, Low RDS(on), SuperSO8 Package, High Efficiency, Power Density.