BSC050N04LSGATMA1: 40 V, 5 mΩ N-Channel OptiMOS™ Power MOSFET for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power switching components. At the forefront of meeting these challenges is the BSC050N04LSGATMA1, a 40 V, N-Channel OptiMOS™ power MOSFET from Infineon Technologies engineered to set new benchmarks in performance.

This MOSFET is defined by its extremely low maximum on-state resistance (RDS(on)) of just 5 mΩ. This critical parameter is the cornerstone of its performance, as it directly translates to minimal conduction losses. When a MOSFET is on, its RDS(on) determines how much power is dissipated as heat. A lower value means more energy is delivered to the load and less is wasted, making the BSC050N04LSGATMA1 exceptionally efficient, especially in high-current applications.

The 40 V drain-source voltage (VDS) rating makes it an ideal candidate for a wide range of industrial and automotive applications. It is perfectly suited for use in 24 V power systems, DC motor control, robust power tools, and high-performance synchronous rectification in switch-mode power supplies (SMPS). This voltage headroom provides a necessary safety margin, ensuring reliable operation under demanding conditions and transient voltage spikes.

Beyond its low RDS(on), the OptiMOS™ technology platform offers significant advantages. It features superior switching performance, which reduces switching losses that become predominant at higher frequencies. This allows designers to increase the switching frequency of their power converters, leading to the use of smaller passive components like inductors and capacitors, and ultimately, a higher power density design. Furthermore, the device boasts an optimized gate charge (Qg), which simplifies drive circuit design and enables faster switching speeds with less drive power.

Housed in a space-saving SuperSO8 package, the BSC050N04LSGATMA1 also addresses the need for miniaturization. Its compact footprint is crucial for modern, densely packed PCBs without compromising its ability to handle high power levels, thanks to its excellent thermal characteristics.

ICGOOODFIND: The BSC050N04LSGATMA1 stands out as a premier solution for designers prioritizing peak efficiency and power density. Its exceptional combination of ultra-low 5 mΩ RDS(on), a robust 40 V rating, and fast switching capabilities provided by OptiMOS™ technology makes it a transformative component for high-current switching applications across industrial, automotive, and computing sectors.

Keywords: Low RDS(on), High Efficiency, OptiMOS™ Technology, Power Density, 40 V Rating.