Infineon IRFR1010ZTRLPBF N-Channel MOSFET: Key Specifications and Application Circuit Design
The Infineon IRFR1010ZTRLPBF is a widely used N-channel power MOSFET designed with advanced process technology to deliver high efficiency and robustness in a variety of switching applications. This component is particularly valued for its low on-state resistance and fast switching speeds, making it an excellent choice for power management circuits, DC-DC converters, motor control, and load switching systems.
Key Electrical Specifications
The standout feature of the IRFR1010ZTRLPBF is its exceptionally low drain-source on-state resistance (RDS(on)), which is typically 12 mΩ at a gate-source voltage (VGS) of 10 V. This low resistance minimizes conduction losses, leading to higher efficiency and reduced heat generation in power circuits. The device is rated for a maximum drain-source voltage (VDS) of 55 V and a continuous drain current (ID) of 44 A at a case temperature (TC) of 25°C, providing a solid balance between voltage handling and current capacity for medium-power applications.
It features a low threshold voltage (VGS(th)), typically 2.35 V, which allows it to be effectively driven by low-voltage logic circuits or microcontrollers, though a dedicated gate driver is often recommended for optimal switching performance. The device is housed in a surface-mount DPAK (TO-252) package, which offers a good compromise between compact size and thermal performance, facilitating efficient heat dissipation when mounted on a PCB with an adequate copper area.
Application Circuit Design Considerations
A common application for this MOSFET is as the main switching element in a synchronous buck DC-DC converter. In such a circuit, the IRFR1010ZTRLPBF would typically be used as the low-side switch. To ensure reliable and efficient operation, several design aspects must be carefully considered.
First, gate driving is critical. While the MOSFET can be turned on by a 5V logic signal, using a dedicated gate driver IC is highly advisable to provide the strong current needed to rapidly charge and discharge the MOSFET's input capacitance (Ciss ≈ 1400 pF). This minimizes the time spent in the linear region during switching transitions, drastically reducing switching losses. A simple gate driver circuit often includes a series resistor (e.g., 10 Ω) to dampen ringing and a pull-down resistor (e.g., 10 kΩ) to ensure the MOSFET turns off reliably if the driver output is high-impedance.
Second, PCB layout is paramount for stability and thermal management. The path from the drain to the output inductor and from the source to ground must be as short and wide as possible to minimize parasitic inductance, which can cause voltage spikes and electromagnetic interference (EMI). A large copper pour connected to the drain and source pins acts as a heatsink, drawing heat away from the device. For high-current applications, additional cooling through a dedicated heatsink may be necessary.
Finally, protection circuitry should not be overlooked. A flyback diode or an RC snubber network across the drain and source can be added to suppress voltage spikes caused by inductive load switching, protecting the MOSFET from exceeding its maximum VDS rating.
ICGOOODFIND
The Infineon IRFR1010ZTRLPBF is a highly efficient and robust N-channel MOSFET, distinguished by its very low RDS(on) and high current handling capability. Its excellent performance in switching applications, combined with a package designed for effective heat dissipation, makes it a superior and reliable choice for designers of power electronics, from motor drives to advanced voltage regulation modules.
Keywords:
1. Low RDS(on)
2. Power Switching
3. DC-DC Converter
4. Gate Driver
5. Thermal Management
