**HMC6787ALC5A: A High-Performance GaAs pHEMT MMIC Low-Noise Amplifier for 2 to 20 GHz Applications**

The relentless drive for higher data rates and broader bandwidth in modern radar, electronic warfare (EW), test and measurement, and 5G communication systems places immense demand on the performance of RF front-ends. At the heart of these systems, the low-noise amplifier (LNA) is critical, as it sets the initial signal-to-noise ratio for the entire receiver chain. The **HMC6787ALC5A** from Analog Devices Inc. stands out as a premier solution, **delivering exceptional noise figure and high gain across an ultra-wide bandwidth** from 2 to 20 GHz.

Fabricated using a high-reliability **0.15 µm GaAs pHEMT (Pseudomorphic High Electron Mobility Transistor) process**, this monolithic microwave integrated circuit (MMIC) is engineered for superior performance. The pHEMT technology is renowned for its excellent electron mobility and carrier saturation velocity, which are fundamental to achieving both low noise and high-frequency operation simultaneously. This makes the HMC6787ALC5A ideal for applications where every fraction of a dB in noise performance is crucial.

A key highlight of this amplifier is its **remarkably low noise figure, typically 1.8 dB across the entire band**. This low noise floor ensures minimal degradation of weak signals, which is paramount for long-range detection and sensitive receiving systems. Complementing this is its **high linearity, with an output IP3 (OIP3) of typically +28 dBm**. This robust linearity allows the LNA to handle strong interfering signals without generating significant intermodulation distortion, thereby preserving the integrity of the desired signal.

The amplifier provides **high small-signal gain of 17 dB**, which effectively suppresses the noise contribution from subsequent stages in the receiver. Furthermore, it features a single positive supply voltage (+5V) and incorporates an internal active bias circuit, ensuring stable and consistent performance over temperature variations. The device is offered in a compact, RoHS-compliant 5x5 mm LCC-32 surface-mount package, facilitating easy integration into multi-chip modules (MCMs) and complex RF printed circuit board (PCB) assemblies.

In summary, the HMC6787ALC5A represents a state-of-the-art solution for broadband RF applications, combining industry-leading noise performance with high gain and linearity in a single, easy-to-use package.

**ICGOODFIND**

**Keywords:** GaAs pHEMT, Low-Noise Amplifier (LNA), Ultra-Wideband, Noise Figure, High Linearity