Infineon IPZ40N04S58R4ATMA1 40V OptiMOS Power MOSFET: Datasheet, Features, and Applications
The Infineon IPZ40N04S58R4ATMA1 is a state-of-the-art 40V N-channel power MOSFET from Infineon's esteemed OptiMOS™ family. Engineered with advanced trench technology, this component sets a new benchmark for efficiency, power density, and reliability in a wide array of power management applications. Its design is optimized to deliver minimal losses, making it an ideal choice for high-performance, energy-sensitive systems.
Key Features and Electrical Characteristics
The standout performance of this MOSFET is driven by its exceptional electrical specifications:
Extremely Low On-Resistance: It boasts an ultra-low maximum RDS(on) of just 0.58 mΩ (at VGS = 10 V, ID = 40 A). This remarkably low resistance is pivotal in minimizing conduction losses, leading to higher efficiency and reduced heat generation.
High Continuous Current: The device can handle a continuous drain current (ID) of up to 400 A, showcasing its capability to manage very high power levels in demanding circuits.
Optimized Gate Charge: Featuring an optimized low gate charge (QG), the MOSFET ensures fast switching transitions. This reduces switching losses significantly, which is crucial for high-frequency operation.
Superior Avalanche Ruggedness: The component is designed to be highly robust, offering excellent resilience against avalanche events, enhancing system reliability under stressful conditions.
Logic Level Drive: With a low gate threshold voltage, it is suitable for direct drive from 3.3 V or 5 V logic-level controllers, simplifying gate drive circuit design.
Primary Applications
The combination of high current capability, low losses, and fast switching speed makes the IPZ40N04S58R4ATMA1 exceptionally versatile. Its primary application areas include:
DC-DC Converters: Especially in high-current, non-isolated point-of-load (POL) converters and voltage regulator modules (VRMs) for servers, telecom infrastructure, and computing hardware.
Motor Control: Ideal for driving brushed and brushless DC motors in industrial automation, robotics, and automotive systems (e.g., electric power steering, pump controls).
Power Distribution: Used in OR-ing FET and hot-swap circuits to manage power paths with minimal voltage drop and high reliability.
Battery Management Systems (BMS): Serving as a high-efficiency protection switch in battery packs for electric vehicles, power tools, and energy storage systems due to its low RDS(on).
Datasheet Overview
The official datasheet is an essential resource for design engineers. It provides comprehensive details, including:
Absolute maximum ratings and thermal characteristics.
Detailed static and dynamic electrical parameters.
Typical performance characteristics graphs (e.g., RDS(on) vs. Gate Voltage, Switching Times).
Package information (PG-TDSON-8-55, also known as SuperSO8) with outline drawings and recommended PCB land patterns.
Application notes and test circuits for proper implementation.
ICGOODFIND: The Infineon IPZ40N04S58R4ATMA1 represents the pinnacle of power MOSFET technology, offering an unparalleled blend of ultra-low resistance, high current handling, and fast switching performance. It is a cornerstone component for engineers aiming to push the boundaries of efficiency and power density in modern electronic systems, from data centers to electric mobility.
Keywords: Power MOSFET, Low RDS(on), High Current, OptiMOS, Fast Switching.
